Fundamentals of Semiconductors: Physics and Materials Properties

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Fundamentals of Semiconductors: Physics and Materials Properties

Introduction

Fundamentals of Semiconductors: Physics and Materials Properties

    Semiconductor physics and material science have continued to prosper and to break new ground. For example, in the years since the publication of the first edition of this book, the large band gap semiconductor GaN and related alloys, such as the GaInN and AlGaN systems, have all become important materials for light emitting diodes (LED) and laser diodes. The large scale production of bright and energy-efficient white-light LED may one day change the way we light our homes and workplaces. This development may even impact our environment by decreasing the amount of fossil fuel used to produce electricity. In response to this huge rise in interest in the nitrides we have added, in appropriate places throughout the book, new information on GaN and its alloys. 

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    New techniques, such as Raman scattering of x-rays, have given detailed information about the vibrational spectra of the nitrides, available only as thin films or as very small single crystals. An example of the progress in semiconductor physics is our understanding of the class of deep defect centers known as the DX centers. During the preparation of the first edition, the physics behind these centers was not universally accepted and not all its predicted properties had been verified experimentally. In the intervening years additional experiments have verified all the remaining theoretical predictions so that these deep centers are now regarded as some of the best understood defects. It is now time to introduce readers to the rich physics behind this important class of defects

Antenna Theory: Analysis and Design

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Table of Contents

1. Introduction

1.1 A Survey of Semiconductors 

1.2 Growth Techniques

2. Electronic Band Structures

2.1 Quantum Mechanics

2.2 Translational Symmetry and Brillouin Zones

2.3 A Pedestrian’s Guide to Group Theory

2.4 Empty Lattice or Nearly Free Electron Energy Bands

2.5 Band Structure Calculations by Pseudopotential Methods

2.6 The k·p Method of Band-Structure Calculations

2.7 Tight-Binding or LCAO Approach to the Band Structure of Semiconductors

3. Vibrational Properties of Semiconductors, and Electron–Phonon Interactions 

3.1 Phonon Dispersion Curves of Semiconductors

3.2 Models for Calculating Phonon Dispersion Curves of Semiconductors

3.3 Electron–Phonon Interactions

4. Electronic Properties of Defects

4.1 Classification of Defects

4.2 Shallow or Hydrogenic Impurities

4.3 Deep Centers

5. Electrical Transport

5.1 Quasi-Classical Approach

5.2 Carrier Mobility for a Nondegenerate Electron Gas

5.3 Modulation Doping

5.4 High-Field Transport and Hot Carrier Effects 

5.5 Magneto-Transport and the Hall Effect

6. Optical Properties 

6.1 Macroscopic Electrodynamics

6.2 The Dielectric Function

6.3 Excitons

6.4 Phonon-Polaritons and Lattice Absorption

6.5 Absorption Associated with Extrinsic Electrons

6.6 Modulation Spectroscopy

6.7 Addendum (Third Edition): Dielectric Function

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